2 citations · 2 across the 4 of their papers we have counts for
4 papers
Germanium-tin (GeSn) avalanche photodiode with up to 2.7 micro cutoff wavelength for extended SWIR detection
Quang Minh Thai, Rajesh Kumar, Justin Rudie +11
Separate absorption charge multiplication germanium tin on silicon avalanche photodiode offers a viable solution to achieve CMOS compatible, high sensitivity detection technology i…
Systematic study of high performance GeSn photodiodes with thick absorber for SWIR and extended SWIR detection
Quang Minh Thai, Rajesh Kumar, Abdulla Said Ali +13
Germanium-tin (GeSn) photodiodes potentiate a viable solution to integrate SWIR and extended SWIR detection technology into CMOS processing line. However, challenges in the growth…
Ge0.95Sn0.05 on Si avalanche photodiode with Spectral Response Cutoff at 2.14 micrometer
Justin Rudie, Xiaoxin Wang, Rajesh Kumar +9
GeSn-based avalanche photodiode (APD) operating in shortwave infrared (SWIR) wavelength was demonstrated in this work. A separate absorption and charge multiplication (SACM) struct…
Monolithic Germanium Tin on Si Avalanche Photodiodes
Justin Rudie, Sylvester Amoah, Xiaoxin Wang +8
We demonstrate monolithically grown germanium-tin (GeSn) on silicon avalanche photodiodes (APDs) for infrared light detection. A relatively thinner Ge buffer design was adopted to…