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cond-mat.mtrl-sci2025
Si Intercalation Beneath Epitaxial Graphene: Modulating Mott States at the SiC(0001) Interface
Niclas Tilgner, Zamin Mamiyev, Susanne Wolff +4
Intercalation has proven to be a powerful tool for tailoring the electronic properties of freestanding graphene layers as well as for stabilizing the intercalated material in a two…
cond-mat.mtrl-sci2025
Growth dynamics of graphene buffer layer formation on ultra-smooth SiC(0001) surfaces
Julia Guse, Stefan Wundrack, Marius Eckert +14
In this study the growth process of epitaxial graphene on SiC was investigated systematically. The transition from the initial buffer layer growth to the formation of the first mon…