4 papers
Si Intercalation Beneath Epitaxial Graphene: Modulating Mott States at the SiC(0001) Interface
Niclas Tilgner, Zamin Mamiyev, Susanne Wolff +4
Intercalation has proven to be a powerful tool for tailoring the electronic properties of freestanding graphene layers as well as for stabilizing the intercalated material in a two…
Solving the Phase Problem of Diffraction: X-ray Standing Waves Imaging on Bismuthene/SiC(0001)
Niclas Tilgner, Susanne Wolff, Serguei Soubatch +6
The phase retrieval problem is a fundamental shortcoming of all diffraction-based methods, arising from the inability to measure the phase of scattered waves. The (normal incidence…
Growth dynamics of graphene buffer layer formation on ultra-smooth SiC(0001) surfaces
Julia Guse, Stefan Wundrack, Marius Eckert +14
In this study the growth process of epitaxial graphene on SiC was investigated systematically. The transition from the initial buffer layer growth to the formation of the first mon…
Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface
Niclas Tilgner, Susanne Wolff, Serguei Soubatch +8
Quantum Spin Hall Insulators (QSHI) have been extensively studied both theoretically and experimentally because they exhibit robust helical edge states driven by spin-orbit couplin…