8 citations · 12 across the 8 of their papers we have counts for
8 papers
Spin- and Angle-resolved Photoelectron Spectroscopy Study of the Quantum Spin Hall Insulator Bismuthene and its Precursor Phase
Niclas Tilgner, Andres David Peña Unigarro, Susanne Wolff +6
Recent studies have revealed that a confined bismuth layer at the graphene/SiC interface can be reversibly switched between a topologically trivial precursor phase and the quantum…
Ultrafast signatures of Dirac / flat-band hybrid states from time-resolved ARPES
Maria-Elisabeth Federl, Johannes Gradl, Franziska Bergmeier +12
Hybridization of highly itinerant Dirac electrons with localized flat-band states is predicted to yield emergent phenomena such as exotic heavy-fermion behaviour. Epitaxial graphen…
Graphene-capped bismuthene on SiC as a platform for correlated quantum spin Hall edge states
Huu Thoai Ngo, Zamin Mamiyev, Niclas Tilgner +4
Epitaxial bismuthene on SiC(0001) hosts symmetry-protected metallic edge states within a large bulk band gap, establishing it as a promising two-dimensional topological insulator f…
Confinement Epitaxy of Large-Area Two-Dimensional Sn at the Graphene/SiC Interface
Zamin Mamiyev, Niclas Tilgner, Narmina O. Balayeva +3
Confinement epitaxy beneath graphene stabilizes exotic material phases by restricting vertical growth and altering lateral diffusion, conditions unattainable on bare substrates. Ho…
Si Intercalation Beneath Epitaxial Graphene: Modulating Mott States at the SiC(0001) Interface
Niclas Tilgner, Zamin Mamiyev, Susanne Wolff +4
Intercalation has proven to be a powerful tool for tailoring the electronic properties of freestanding graphene layers as well as for stabilizing the intercalated material in a two…
Solving the Phase Problem of Diffraction: X-ray Standing Waves Imaging on Bismuthene/SiC(0001)
Niclas Tilgner, Susanne Wolff, Serguei Soubatch +6
The phase retrieval problem is a fundamental shortcoming of all diffraction-based methods, arising from the inability to measure the phase of scattered waves. The (normal incidence…
Growth dynamics of graphene buffer layer formation on ultra-smooth SiC(0001) surfaces
Julia Guse, Stefan Wundrack, Marius Eckert +14
In this study the growth process of epitaxial graphene on SiC was investigated systematically. The transition from the initial buffer layer growth to the formation of the first mon…
Reversible Switching of the Environment-Protected Quantum Spin Hall Insulator Bismuthene at the Graphene/SiC Interface
Niclas Tilgner, Susanne Wolff, Serguei Soubatch +8
Quantum Spin Hall Insulators (QSHI) have been extensively studied both theoretically and experimentally because they exhibit robust helical edge states driven by spin-orbit couplin…