22 citations · 22 across the 2 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2025
Electron mobility in AlN from first principles
Amanda Wang, Nick Pant, Woncheol Lee +3
Aluminum nitride is a promising ultra-wide band gap semiconductor for optoelectronics and power electronics. However, its practical applications have been limited by challenges wit…
cond-mat.mtrl-sci2025
Extreme-Band-Gap Semiconductors with Shallow Dopants and Mobile Carriers
Sieun Chae, Nocona Sanders, Kelsey A. Mengle +8
The conventional distinction between semiconductors and insulators is often based on the magnitude of the band gap, with materials exhibiting gaps wider than 3 eV typically classif…
cond-mat.mtrl-sci2024★ 22 cited
Electron mobility of SnO2 from first principles
Amanda Wang, Kyle Bushick, Nick Pant +6
The transparent conducting oxide SnO2 is a wide bandgap semiconductor that is easily n-type doped and widely used in various electronic and optoelectronic applications. Experimenta…