activity
20212026
most citedNear surface defects: Cause of deficit between internal and external open-circuit voltage in solar cells

35 citations · 130 across the 13 of their papers we have counts for

collaborators

13 papers

cond-mat.mtrl-sci2026

What enables GaOx as hole transport layer for a 16 percent 1.0 eV CuInSe2 Bottom Cells with VOC above 550 mV?

Francesco Lodola, Zhuangyi Zhou, Boaz Koren +10

Among the highly efficient photovoltaic technologies, that do not rely on epitaxy, only chalcopyrites have a bandgap tunable down to 1.00 eV, the ideal for tandem applications. Thi…

cond-mat.mtrl-sci2026

ALD Zinc Tin Oxide Buffers for Chalcopyrite Solar Cells: Electrical Barriers and Conduction Band Cliffs

Boaz Koren, Francesco Lodola, Zhuangyi Zhou +5

Sulfide chalcopyrite, Cu(In,Ga)S2, having wide bandgap (larger than 1.5 eV), favorable optoelectronic properties, and high stability, is a promising top-cell absorber for tandem ap…

cond-mat.mtrl-sci2026

Near 13% efficient semitransparent Cu(In,Ga)S2 solar cells with band gap of 1.6 eV on transparent back contact

Kulwinder Kaur, Arivazhagan Valluvar Oli, Michele Melchiorre +4

Wide-gap Cu(In,Ga)S2 solar cells with In2O3:Sn (ITO) as transparent back contact are evaluated for the application as top cells in tandem devices. The effect of Na on the solar cel…

cond-mat.mtrl-sci2025★ 4 cited

Sodium induced beneficial effects in wide bandgap Cu(In,Ga)S2 solar cell with 15.7% efficiency

Arivazhagan Valluvar Oli, Kulwinder Kaur, Michele Melchiorre +10

This study underscores the pivotal role of sodium (Na) supply in optimizing the optoelectronic properties of wide bandgap (~1.6 eV) Cu(In,Ga)S2 (CIGS) thin film absorbers for high…

cond-mat.mtrl-sci2025

Sub-micron Cu(In,Ga)Se2 solar cell with efficiency of 18.2% enabled by a hole transport layer

Taowen Wang, Longfei Song, Saeed Bayat +6

Reducing the thickness of Cu(In,Ga)Se2 solar cells is a key objective in order to reduce production cost and to improve sustainability. The major challenge for sub-micron Cu(In,Ga)…

cond-mat.mtrl-sci2025★ 6 cited

The effect of a band gap gradient on the radiative losses in the open circuit voltage of solar cells

Sevan Gharabeiki, Francesco Lodola, Tilly Schaaf +9

The radiative open circuit voltage loss in a solar cell occurs because the absorptance spectrum near the band gap shows gradual increase rather than sharp step function like transi…

cond-mat.mtrl-sci2024★ 9 cited

Improved sequentially processed Cu(In,Ga)(S,Se)2 by Ag alloying

Aubin JC. M. Prot, Michele Melchiorre, Tilly Schaaf +10

Alloying small quantities of silver into Cu(In,Ga)Se2 was shown to improve the efficiency for wide and low band gap solar cells. We study low band gap industrial Cu(In,Ga)(S,Se)2 a…

cond-mat.mtrl-sci2023★ 3 cited

Composition dependence of electronic defects in CuGaS2

Damilola Adeleye, Mohit Sood, Michele Melchiorre +2

CuGaS2 films grown by physical vapour deposition have been studied by photoluminescence (PL) spectroscopy, using excitation intensity and temperature dependent analyses. We observe…

cond-mat.mtrl-sci2023★ 14 cited

Composition variations in Cu(In,Ga)(S,Se)2 solar cells: not a gradient, but an interlaced network of two phases

Aubin JC. M. Prot, Michele Melchiorre, Felix Dingwell +10

Record efficiency in chalcopyrite-based solar cells Cu(In,Ga)(S,Se)2 is achieved using a gallium gradient to increase the band gap of the absorber towards the back side. Although t…

cond-mat.mtrl-sci2022★ 18 cited

Post-deposition annealing and interfacial ALD buffer layers of SbSe/CdS stacks for reduced interface recombination and increased open-circuit voltages

Thomas Paul Weiss, Ignacio Minguez-Bacho, Elena Zuccalà +8

Currently, SbSe thin films receive considerable research interest as a solar cell absorber material. When completed into a device stack, the major bottleneck for further de…

physics.app-ph2022★ 23 cited

Solar cell efficiency, diode factor and interface recombination: insights from photoluminescence

T. Wang, F. Ehre, T. P. Weiss +6

Metastable defects can decisively influence the diode factor and thus the efficiency of a solar cell. The diode factor is also influenced by the doping level and the recombination…

cond-mat.mtrl-sci2021★ 35 cited

Near surface defects: Cause of deficit between internal and external open-circuit voltage in solar cells

Mohit Sood, Aleksander Urbaniak, Christian Kameni Boumenou +6

The presence of interface recombination in a complex multilayered thin-film solar structure causes a disparity between the internal open-circuit voltage (VOC,in), measured by photo…

cond-mat.mtrl-sci2021★ 18 cited

Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment

Mohit Sood, Alberto Lomuscio, Florian Werner +6

Interface recombination at the absorber buffer interface impedes the efficiency of a solar cell with an otherwise excellent absorber. The internal voltage or the quasi-Fermi level…