1 citations · 1 across the 4 of their papers we have counts for
4 papers
Mobility Enhancement in Si/SiGe Quantum Well Enabled by a Buried Si Layer Trapping Oxygen Impurities
Felix Reichmann, Alberto Mistroni, Fabian Fidorra +4
Reducing disorder in undoped Si/SiGe field-effect heterostructures remains an important materials challenge for scalable quantum devices, particularly electron spin qubits. Backgro…
Disorder signatures emerging at millikelvin temperatures in Si/SiGe field-effect stacks
Lino Visser, Alberto Mistroni, Yuji Yamamoto +9
The performance and scalability of electron spin qubits based on gate-defined quantum-dots in undoped Si/SiGe field-effect stacks remain constrained by disorder originating from th…
Demonstrating CBM Capabilities by Baryon Reconstruction in Ni+Ni Collisions with the mCBM Experiment at SIS18 of GSI/FAIR
CBM Collaboration, A. Agarwal, Z. Ahammed +338
The Compressed Baryonic Matter (CBM) experiment at the upcoming Facility for Antiproton and Ion Research (FAIR) is a high-rate fixed-target experiment designed to investigate nucle…
High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line
Alberto Mistroni, Marco Lisker, Yuji Yamamoto +13
The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devic…