activity
20232026
most citedLocal laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K

8 citations · 9 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2026

Mobility Enhancement in Si/SiGe Quantum Well Enabled by a Buried Si Layer Trapping Oxygen Impurities

Felix Reichmann, Alberto Mistroni, Fabian Fidorra +4

Reducing disorder in undoped Si/SiGe field-effect heterostructures remains an important materials challenge for scalable quantum devices, particularly electron spin qubits. Backgro…

cond-mat.mes-hall2026

Disorder signatures emerging at millikelvin temperatures in Si/SiGe field-effect stacks

Lino Visser, Alberto Mistroni, Yuji Yamamoto +9

The performance and scalability of electron spin qubits based on gate-defined quantum-dots in undoped Si/SiGe field-effect stacks remain constrained by disorder originating from th…

cs.CR2026

Bit-Flip Vulnerability of Shared KV-Cache Blocks in LLM Serving Systems

Yuji Yamamoto, Satoshi Matsuura

Rowhammer on GPU DRAM has enabled adversarial bit flips in model weights; shared KV-cache blocks in LLM serving systems present an analogous but previously unexamined target. In vL…

cond-mat.mes-hall2025★ 1 cited

High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line

Alberto Mistroni, Marco Lisker, Yuji Yamamoto +13

The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devic…

cond-mat.mes-hall2024

Impact of biased cooling on the operation of undoped silicon quantum well field-effect devices for quantum circuit applications

Laura K. Diebel, Lukas G. Zinkl, Andreas Hötzinger +4

Gate-tunable semiconductor nanosystems are getting more and more important in the realization of quantum circuits. While such devices are typically cooled to operation temperature…

physics.app-ph2023★ 8 cited

Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K

Malte Neul, Isabelle V. Sprave, Laura K. Diebel +6

Si/SiGe heterostructures are of high interest for high mobility transistor and qubit applications, specifically for operations below 4.2 K. In order to optimize parameters such as…