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Mobility Enhancement in Si/SiGe Quantum Well Enabled by a Buried Si Layer Trapping Oxygen Impurities
Felix Reichmann, Alberto Mistroni, Fabian Fidorra +4
Reducing disorder in undoped Si/SiGe field-effect heterostructures remains an important materials challenge for scalable quantum devices, particularly electron spin qubits. Backgro…
Enhanced intrinsic spin-orbit driving of a Loss-DiVincenzo qubit near the spin-valley hotspot in Si/SiGe
Alexander Willmes, Max Oberländer, Max Beer +7
In most Si/SiGe-based spin qubit implementations, high-fidelity single-qubit gates are achieved using micromagnets, which enable the use of electric spin dipole resonance via synth…
Disorder signatures emerging at millikelvin temperatures in Si/SiGe field-effect stacks
Lino Visser, Alberto Mistroni, Yuji Yamamoto +9
The performance and scalability of electron spin qubits based on gate-defined quantum-dots in undoped Si/SiGe field-effect stacks remain constrained by disorder originating from th…