1 citations · 1 across the 3 of their papers we have counts for
3 papers
Mobility Enhancement in Si/SiGe Quantum Well Enabled by a Buried Si Layer Trapping Oxygen Impurities
Felix Reichmann, Alberto Mistroni, Fabian Fidorra +4
Reducing disorder in undoped Si/SiGe field-effect heterostructures remains an important materials challenge for scalable quantum devices, particularly electron spin qubits. Backgro…
Disorder signatures emerging at millikelvin temperatures in Si/SiGe field-effect stacks
Lino Visser, Alberto Mistroni, Yuji Yamamoto +9
The performance and scalability of electron spin qubits based on gate-defined quantum-dots in undoped Si/SiGe field-effect stacks remain constrained by disorder originating from th…
High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line
Alberto Mistroni, Marco Lisker, Yuji Yamamoto +13
The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devic…