most citedSubthreshold Swing Behavior in Amorphous Indium-Gallium-Zinc-Oxide Transistors from Room to Cryogenic Temperatures

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physics.app-ph2025★ 6 cited

The impact of process steps on nearly ideal subthreshold slope in 300-mm compatible InGaZnO TFT

Hongwei Tang, Dennis Lin, Subhali Subhechha +14

While we demonstrate a back-gated (BG) amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) transistors with a nearly ideal subthreshold slope (SS) ~ 60 mV/dec. However, SS degrades when a…