Ola Nilsen

most citedComparison of near-interface traps in Al

_{2}

_{3}

/4H-SiC and Al

_{2}

_{3}

/SiO

_{2}

/4H-SiC structures

28 citations · 28 across the 1 of their papers we have counts for

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cond-mat.mtrl-sci2006★ 28 cited

Comparison of near-interface traps in Al $_{2}$ O $_{3}$ /4H-SiC and Al $_{2}$ O $_{3}$ /SiO $_{2}$ /4H-SiC structures

Marc Avice, Ulrike Grossner, Ioana Pintilie +3

Aluminum oxide (Al2O3) has been grown by atomic layer deposition on n-type 4H-SiC with and without a thin silicon dioxide (SiO2) intermediate layer. By means of Capacitance Voltage…

Comparison of near-interface traps in Al2​O3​/4H-SiC and Al2​O3​/SiO2​/4H-SiC structures

Comparison of near-interface traps in Al $_{2}$ O $_{3}$ /4H-SiC and Al $_{2}$ O $_{3}$ /SiO $_{2}$ /4H-SiC structures