12 citations · 39 across the 5 of their papers we have counts for
Showing physics.app-phShow all
2 papers · 1 filter
physics.app-ph2025★ 6 cited
The impact of process steps on nearly ideal subthreshold slope in 300-mm compatible InGaZnO TFT
Hongwei Tang, Dennis Lin, Subhali Subhechha +14
While we demonstrate a back-gated (BG) amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) transistors with a nearly ideal subthreshold slope (SS) ~ 60 mV/dec. However, SS degrades when a…
physics.app-ph2017★ 12 cited
Fabrication of magnetic tunnel junctions connected through a continuous free layer to enable spin logic devices
Danny Wan, Mauricio Manfrini, Adrien Vaysset +16
Magnetic tunnel junctions (MTJs) interconnected via a continuous ferromagnetic free layer were fabricated for Spin Torque Majority Gate (STMG) logic. The MTJs are biased independen…