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Anastasiia Kruv

2 papers hereh-index 791 citations16 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author1
  • middle author1

Across the 2 of 2 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci2

identity via Semantic Scholar / OpenAlex

most citedIn-poor IGZO: superior resilience to hydrogen in forming gas anneal and PBTI

10 citations · 14 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2025★ 4 cited

Impact of Mechanical Stress on IGZO TFTs: Enhancing PBTI Degradation

K. Vishwakarma, K. Lee, A. Kruv +8

This study investigates the impact of out-of-plane compressive mechanical stress (MS) on the performance and reliability of n-channel IGZO thin film transistors (TFTs). It is demon…

cond-mat.mtrl-sci2024★ 10 cited

In-poor IGZO: superior resilience to hydrogen in forming gas anneal and PBTI

A. Kruv, M. J. van Setten, A. Chasin +12

Integrating In-Ga-Zn-oxide (IGZO) channel transistors in silicon-based ecosystems requires the resilience of the channel material to hydrogen treatment. Standard IGZO, containing 4…

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