most citedRipple-to-dome transition: the growth evolution of Ge on vicinal Si(1 1 10) surface

14 citations · 14 across the 1 of their papers we have counts for

collaborators

1 paper

cond-mat.mtrl-sci2006

Experimental corroboration of the Mulheran-Blackman explanation of the scale invariance in thin film growth: the case of InAs quantum dots on GaAs(001)

M. Fanfoni, E. Placidi, F. Arciprete +3

Mulheran and Blackman have provided a simple and clear explanation of the scale invariance of the island size distribution at the early stage of film growth [Phil. Mag. Lett. 72, 5…