4 citations · 4 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2025
Decoupling Electric Field and Temperature-Driven Atomistic Forming Mechanisms in TaOx/HfO2-Based ReRAMs using Reactive Molecular Dynamics Simulations
Simanta Lahkar, Valeria Bragaglia, Behnaz Bagheri +4
Resistive random access memories (ReRAMs) with a bilayer TaOx/HfO2 stack structure have shown unique multi-level resistive switching capabilities. However, the physical processes g…
cond-mat.mtrl-sci2023★ 4 cited
Competing mechanisms govern the thermal rectification behavior in semi-stochastic polycrystalline graphene with graded grain-size distribution
Simanta Lahkar, Raghavan Ranganathan
Thermal rectifiers are devices that have different thermal conductivities in opposing directions of heat flow. The realization of practical thermal rectifiers relies significantly…