2 papers
cond-mat.mtrl-sci2026
Tuning the Coercive Field in Ferroelectric Hf0.5Zr0.5O2-Al2O3 Heterostructures via Interfacial Charge Dynamics
Marshall B. Frye, Chanyoung Kim, Jeong-Woo Sun +8
Interleaving dielectric layers into ferroelectric Hf0.5Zr0.5O2 (HZO) films increases the memory window (MW) beyond what is accounted for by the dielectric constants. Determining th…
cond-mat.mtrl-sci2025
Nitrogen Vacancies Induce Fatigue in Ferroelectric
Walter J. Smith, Betul Akkopru-Akgun, Erdem Ozdemir +7
Wurtzite ferroelectrics (e.g., ) are being explored for high-temperature and emerging near-, or in-compute, memory architectures due to the material ad…