8 citations · 14 across the 5 of their papers we have counts for
7 papers
Pure Spin Photocurrent in Altermagnetic Photovoltaic Battery
Qiang Li, Shibo Fang, Zongmeng Yang +11
Altermagnets, featuring momentum-dependent spin splitting without net magnetization, provide a promising platform for spintronic functionalities beyond conventional ferromagnets an…
Altermagnetic Flatband-Driven Fermi Surface Geometry for Giant Tunneling Magnetoresistance
Xingyue Yang, Shibo Fang, Zongmeng Yang +3
Altermagnetism, characterized by zero net magnetization and symmetry-protected spin-split band structures, has recently emerged as a promising platform for spintronics. In altermag…
One-dimensional electronics with edge states in two-dimensional altermagnets
Shibo Fang, Zongmeng Yang, Jianhua Wang +5
The coupling between real-space inhomogeneities coordinates and spin (r-s) provides an alternative route to achieve efficient spin manipulation in spintronics beyond the convention…
Computational Design of Two-Dimensional MoSiN Family Field-Effect Transistor for Future Ångström-Scale CMOS Technology Nodes
Che Chen Tho, Zongmeng Yang, Shibo Fang +9
Advancing complementary metal-oxide-semiconductor (CMOS) technology into the sub-1-nm angström-scale technology nodes is expected to involve alternative semiconductor channel mater…
Pressure-Driven Metallicity in Ångström-Thickness 2D Bismuth and Layer-Selective Ohmic Contact to MoS2
Shuhua Wang, Shibo Fang, Qiang Li +8
Recent fabrication of two-dimensional (2D) metallic bismuth (Bi) via van der Waals (vdW) squeezing method opens a new avenue to ultrascaling metallic materials into the ångström-th…
Unconventional tunnel magnetoresistance scaling with altermagnets
Zongmeng Yang, Xingyue Yang, Jianhua Wang +7
In conventional magnetic tunnel junctions (MTJs), the tunnel magnetoresistance (TMR) typically increases with barrier thickness as electron transmission in the antiparallel configu…
Quantum Transport Simulation of Sub-1-nm Gate Length Monolayer MoS2 Transistors
Ying Li, Yang Shen, Linqiang Xu +7
Sub-1-nm gate length transistors have been experimentally fabricated, but their device performance limit remains elusive. Herein, we explore the performance limits of the s…