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20242026
most citedLarge Enhancement of Properties in Strained Lead-free Multiferroic Solid Solutions with Strong Deviation from Vegard's Law

12 citations · 19 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2026

Nitrogen doping induced metal-insulator transition with iso-symmetric character in rutile VO2

Baichen Lin, Shanquan Chen, Yubo Zhang +18

Metal-insulator transitions (MITs) in correlated oxides offer immense potential for next-generation Mottronic devices. However, their integration into practical applications is oft…

cond-mat.str-el2026★ 5 cited

Direct Evidence of a Near-Ideal Jeff = 1/2 Ground State in Triangular-Lattice Na2BaCo(PO4)2

M. M. Ferreira-Carvalho, S. H. Chen, Y. C. Ku +7

We investigated the local Co 3d electronic structure of Na2BaCo(PO4)2 using polarization-dependent X-ray absorption spectroscopy (XAS) in combination with full multiplet cluster ca…

cond-mat.mtrl-sci2025

Enhancing ferroelectric stability: Wide-range of adaptive control in epitaxial HfO2/ZrO2 superlattices

Jingxuan Li, Shiqing Deng, Liyang Ma +12

The metastability of the polar phase in HfO2, despite its excellent compatibility with the complementary metal-oxide-semiconductor process, remains a key obstacle for its industria…

cond-mat.mtrl-sci2024★ 12 cited

Large Enhancement of Properties in Strained Lead-free Multiferroic Solid Solutions with Strong Deviation from Vegard's Law

Tao Wang, Mingjie Zou, Dehe Zhang +18

Efforts to combine the advantages of multiple systems to enhance functionlities through solid solution design present a great challenge due to the constraint imposed by the classic…

cond-mat.mtrl-sci2024★ 2 cited

Enhanced polarization switching characteristics of HfO2 ultrathin films via acceptor-donor co-doping

Chao Zhou, Liyang Ma, Yanpeng Feng +13

In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polariza…