Channyung Lee

collaborators

3 papers

cond-mat.mtrl-sci2025

Diffusion of acceptor dopants in monoclinic $β$ -Ga $_{2}$ O $_{3}$

Channyung Lee, Michael A. Scarpulla, Elif Ertekin +1

$β$ -Ga $_{2}$ O $_{3}$ is a leading ultra-wide band gap semiconductor, but its performance depends on precise control over dopant incorporation and stability. In this work, we use first-p…

cond-mat.mtrl-sci2025

Investigation of O interstitial diffusion in $β$ -Ga $_{2}$ O $_{3}$ : direct approach via master diffusion equations

Grace McKnight, Channyung Lee, Elif Ertekin

Monoclinic $β$ -Ga $_{2}$ O $_{3}$ , a promising wide band gap semiconducting material, exhibits complex, anisotropic diffusional characteristics and mass transport behavior as a results of…

cond-mat.mtrl-sci2025

Quantitative Modeling of Point Defects in $β$ -Ga2O3 Combining Hybrid Functional Energetics with Semiconductor and Processes Thermodynamics

Khandakar Aaditta Arnab, Megan Stephens, Isaac Maxfield +5

B-gallium oxide (B-Ga2O3) is of high interest for power electronics because of its unique combination of melt growth, epitaxial growth, n-type dopability, ultrawide bandgap, and hi…

Diffusion of acceptor dopants in monoclinic β-Ga2​O3​

Investigation of O interstitial diffusion in β-Ga2​O3​: direct approach via master diffusion equations

Quantitative Modeling of Point Defects in β-Ga2O3 Combining Hybrid Functional Energetics with Semiconductor and Processes Thermodynamics

Diffusion of acceptor dopants in monoclinic $β$ -Ga $_{2}$ O $_{3}$

Investigation of O interstitial diffusion in $β$ -Ga $_{2}$ O $_{3}$ : direct approach via master diffusion equations

Quantitative Modeling of Point Defects in $β$ -Ga2O3 Combining Hybrid Functional Energetics with Semiconductor and Processes Thermodynamics