16 citations · 16 across the 4 of their papers we have counts for
4 papers
Diffusion of acceptor dopants in monoclinic -GaO
Channyung Lee, Michael A. Scarpulla, Elif Ertekin +1
-GaO is a leading ultra-wide band gap semiconductor, but its performance depends on precise control over dopant incorporation and stability. In this work, we use first-p…
Investigation of O interstitial diffusion in -GaO: direct approach via master diffusion equations
Grace McKnight, Channyung Lee, Elif Ertekin
Monoclinic -GaO, a promising wide band gap semiconducting material, exhibits complex, anisotropic diffusional characteristics and mass transport behavior as a results of…
Quantitative Modeling of Point Defects in -Ga2O3 Combining Hybrid Functional Energetics with Semiconductor and Processes Thermodynamics
Khandakar Aaditta Arnab, Megan Stephens, Isaac Maxfield +5
B-gallium oxide (B-Ga2O3) is of high interest for power electronics because of its unique combination of melt growth, epitaxial growth, n-type dopability, ultrawide bandgap, and hi…
Investigation of Ga interstitial and vacancy diffusion in -GaO via split defects: a direct approach via master diffusion equations
Channyung Lee, Michael A. Scarpulla, Elif Ertekin
The low symmetry of monoclinic -GaO leads to elaborate intrinsic defects, such as Ga vacancies split amongst multiple lattice sites. These defects contribute to fast, an…