16 citations · 55 across the 9 of their papers we have counts for
9 papers
Influence of thermal noise on the field-driven dynamics of the non-collinear antiferromagnet Mn3Sn
Siyuan Qian, Ankit Shukla, Shaloo Rakheja
experiences a tensile strain when grown epitaxially on , and thus the energy landscape changes from six-…
Spintronic devices and applications using noncollinear chiral antiferromagnets
Ankit Shukla, Siyuan Qian, Shaloo Rakheja
Antiferromagnetic materials have a vanishingly small net magnetization, which generates weak dipolar fields and makes them robust against external magnetic perturbation and rapid m…
Temperature-Resilient True Random Number Generation with Stochastic Actuated Magnetic Tunnel Junction Devices
Laura Rehm, Md Golam Morshed, Shashank Misra +5
Nanoscale magnetic tunnel junction (MTJ) devices can efficiently convert thermal energy in the environment into random bitstreams for computational modeling and cryptography. We re…
Reduced sensitivity to process, voltage and temperature variations in activated perpendicular magnetic tunnel junctions based stochastic devices
Md Golam Morshed, Laura Rehm, Ankit Shukla +5
True random number generators (TRNGs) are fundamental building blocks for many applications, such as cryptography, Monte Carlo simulations, neuromorphic computing, and probabilisti…
Impact of strain on the SOT-driven dynamics of thin film MnSn
Ankit Shukla, Siyuan Qian, Shaloo Rakheja
MnSn, a metallic antiferromagnet with an anti-chiral 120 spin structure, generates intriguing magneto-transport signatures such as a large anomalous Hall effect, spin-p…
Physics-Based Modeling and Validation of 2D Schottky Barrier Field-Effect Transistors
Ashwin Tunga, Zijing Zhao, Ankit Shukla +2
In this work, we describe the charge transport in two-dimensional (2D) Schottky barrier field-effect transistors (SB-FETs) based on the carrier injection at the Schottky contacts.…
Content Addressable Memories and Transformable Logic Circuits Based on Ferroelectric Reconfigurable Transistors for In-Memory Computing
Zijing Zhao, Junzhe Kang, Ashwin Tunga +4
As a promising alternative to the Von Neumann architecture, in-memory computing holds the promise of delivering high computing capacity while consuming low power. Content addressab…
Order parameter dynamics in MnSn driven by DC and pulsed spin-orbit torques
Ankit Shukla, Siyuan Qian, Shaloo Rakheja
We numerically investigate and develop analytic models for both the DC and pulsed spin-orbit-torque (SOT)-driven response of order parameter in single-domain MnSn, which is a m…
A True Random Number Generator for Probabilistic Computing using Stochastic Magnetic Actuated Random Transducer Devices
Ankit Shukla, Laura Heller, Md Golam Morshed +4
Magnetic tunnel junctions (MTJs), which are the fundamental building blocks of spintronic devices, have been used to build true random number generators (TRNGs) with different trad…