216 citations · 371 across the 7 of their papers we have counts for
7 papers
Distinct Lifetimes for and Loop Measurements in a Majorana Tetron Device
Morteza Aghaee, Zulfi Alam, Rikke Andersen +164
We present a hardware realization and measurements of a tetron qubit device in a superconductor-semiconductor heterostructure. The device architecture contains two parallel superco…
Response to recent comments on Phys. Rev. B 107, 245423 (2023) and Subsection S4.3 of the Supp. Info. for Nature 638, 651-655 (2025)
Morteza Aghaee, Zulfi Alam, Mariusz Andrzejczuk +127
The topological gap protocol (TGP) is a statistical test designed to identify a topological phase with high confidence and without human bias. It is used to determine a promising p…
Roadmap to fault tolerant quantum computation using topological qubit arrays
David Aasen, Morteza Aghaee, Zulfi Alam +179
We describe a concrete device roadmap towards a fault-tolerant quantum computing architecture based on noise-resilient, topologically protected Majorana-based qubits. Our roadmap e…
Interferometric Single-Shot Parity Measurement in an InAs-Al Hybrid Device
Morteza Aghaee, Alejandro Alcaraz Ramirez, Zulfi Alam +159
The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operati…
InAs-Al Hybrid Devices Passing the Topological Gap Protocol
Morteza Aghaee, Arun Akkala, Zulfi Alam +124
We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majora…
Semiconductor - Ferromagnetic Insulator - Superconductor Nanowires: Stray Field and Exchange Field
Yu Liu, Saulius Vaitiekenas, Sara Marti-Sanchez +12
Nanowires can serve as flexible substrates for hybrid epitaxial growth on selected facets, allowing for design of heterostructures with complex material combinations and geometries…
Doping incorporation paths in catalyst-free Be-doped GaAs nanowires
Alberto Casadei, Peter Krogstrup, Martin Heiss +7
The incorporation paths of Be in GaAs nanowires grown by the Ga-assisted method in molecular beam epitaxy has been investigated by electrical measurements of nanowires with differe…