26 citations · 52 across the 9 of their papers we have counts for
9 papers
20 Second Parity Lifetime in an InAs--Pb Tetron Device
Morteza Aghaee, Zulfi Alam, Mariusz Andrzejczuk +162
A central promise of topological quantum computing is that increasing the excitation gap improves device performance significantly. Here, we experimentally validate this principle…
Distinct Lifetimes for and Loop Measurements in a Majorana Tetron Device
Morteza Aghaee, Zulfi Alam, Rikke Andersen +164
We present a hardware realization and measurements of a tetron qubit device in a superconductor-semiconductor heterostructure. The device architecture contains two parallel superco…
Response to recent comments on Phys. Rev. B 107, 245423 (2023) and Subsection S4.3 of the Supp. Info. for Nature 638, 651-655 (2025)
Morteza Aghaee, Zulfi Alam, Mariusz Andrzejczuk +127
The topological gap protocol (TGP) is a statistical test designed to identify a topological phase with high confidence and without human bias. It is used to determine a promising p…
Roadmap to fault tolerant quantum computation using topological qubit arrays
David Aasen, Morteza Aghaee, Zulfi Alam +179
We describe a concrete device roadmap towards a fault-tolerant quantum computing architecture based on noise-resilient, topologically protected Majorana-based qubits. Our roadmap e…
Interferometric Single-Shot Parity Measurement in an InAs-Al Hybrid Device
Morteza Aghaee, Alejandro Alcaraz Ramirez, Zulfi Alam +159
The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operati…
Magnetoresistence engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates
G. Fábián, P. Makk, M. H. Madsen +3
We present magnetoresistance (MR) experiments on an InAs nanowire quantum dot device with two ferromagnetic sidegates (FSGs) in a split-gate geometry. The wire segment can be elect…
Raman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation
R. Tanta, M. H. Madsen, Z. Liao +4
The thermal gradient along indium-arsenide nanowires was engineered by a combination of fabricated micro- trenches in the supporting substrate and focused laser irradiation. This a…
Giga-Hertz quantized charge pumping in bottom gate defined InAs nanowire quantum dots
S. d'Hollosy, M. Jung, A. Baumgartner +4
Semiconducting nanowires (NWs) are a versatile, highly tunable material platform at the heart of many new developments in nanoscale and quantum physics. Here, we demonstrate charge…
Epitaxial aluminum contacts to InAs nanowires
N. L. B. Ziino, P. Krogstrup, M. H. Madsen +5
We report a method for making epitaxial superconducting contacts to semiconducting nanowires. The temperature and gate characteristics demonstrate barrier-free electrical contact,…