2 papers
cs.ET2026
Self-Heating and Radiation Hardness Studies of 3nm GAA-FET-Based SRAM with Different Substrate Isolation Techniques
Albert Lu, Junipero Verbeke, Phil Oldiges +2
In this work, 3D full-domain 3 nm gate-all-around field-effect transistor (GAA-FET) static random access memories (SRAMs) with various substrate isolation techniques are simulated…
cs.ET2025
Prediction of Alpha-Particle-Immune Gate-All-Around Field-Effect Transistors (GAA-FET) Based SRAM Design
Albert Lu, Reza Arghavani, Hiu Yung Wong
In this paper, using 3D Technology Computer-Aided-Design (TCAD) simulations, we show that it is possible to design a static random-access memory (SRAM) using gate-all-around field-…