Density functional theory study of effect of NO annealing on electronic structure and carrier-scattering property of 4H-SiC(0001)/SiO${}_2$ interface

Nahoto Funaki, Kosei Sugiyama, Mitsuharu Uemoto +1

The effect of the nitrided layer introduced by NO annealing on the electronic structure and carrier scattering property of the 4H-SiC(0001)/SiO${}_2$ interface is investigated by the…