most citedHoles in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon MOSFETs

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cond-mat.mes-hall2026★ 1 cited

Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices

Md. Mamunur Rahman, Ensar Vahapoglu, Kok Wai Chan +16

We systematically investigate the interplay between materials engineering, quantum transport, and low-frequency charge noise in silicon metal--oxide--semiconductor (SiMOS) quantum…

cond-mat.mes-hall2025★ 1 cited

Holes in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon MOSFETs

J. P. Wendoloski, J. Hillier, S. D. Liles +17

The quality of the silicon-oxide interface plays a crucial role in fabricating reproducible silicon spin qubits. In this work we characterize interface quality by performing mobili…