4 citations · 8 across the 4 of their papers we have counts for
5 papers
Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices
Md. Mamunur Rahman, Ensar Vahapoglu, Kok Wai Chan +16
We systematically investigate the interplay between materials engineering, quantum transport, and low-frequency charge noise in silicon metal--oxide--semiconductor (SiMOS) quantum…
Scalable quantum current source on commercial CMOS process technology
Ajit Dash, Suyash Pati Tripathi, Dimitrios Georgakopoulos +17
Many quantum technologies require a precise electrical current standard that can only be achieved with expensive cryogenics, or through the secondary standards, such as resistance…
Holes in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon MOSFETs
J. P. Wendoloski, J. Hillier, S. D. Liles +17
The quality of the silicon-oxide interface plays a crucial role in fabricating reproducible silicon spin qubits. In this work we characterize interface quality by performing mobili…
A 2x2 quantum dot array in silicon with fully tuneable pairwise interdot coupling
Wee Han Lim, Tuomo Tanttu, Tony Youn +12
Recent advances in semiconductor spin qubits have achieved linear arrays exceeding ten qubits. Moving to two-dimensional (2D) qubit arrays is a critical next step to advance toward…
Silicon charge pump operation limit above and below liquid helium temperature
Ajit Dash, Steve Yianni, MengKe Feng +4
Semiconductor tunable barrier single-electron pumps can produce output current of hundreds of picoamperes at sub ppm precision, approaching the metrological requirement for the dir…