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cond-mat.mes-hall2024
Effects of Strain Compensation on Electron Mobilities in InAs Quantum Wells Grown on InP(001)
C. P. Dempsey, J. T. Dong, I. Villar Rodriguez +6
InAs quantum wells (QWs) grown on InP substrates are interesting for their applications in devices with high spin-orbit coupling (SOC) and their potential role in creating topologi…
cond-mat.mes-hall2024★ 5 cited
Enhanced mobility of ternary InGaAs quantum wells through digital alloying
Jason T. Dong, Yilmaz Gul, Aaron N. Engel +4
High In content InGaAs quantum wells (In 75%) are potentially useful for topological quantum computing and spintronics applications. In high mobility InGaAs quantum wells, a…