Thermal Transport and Application Reassessment of ThSi${}_2$N${}_4$ Monolayer: From FET Channel to Thermoelectric Material

Maryam Mirzaei Farshmi, Seyedeh Ameneh Bahadori, Zahra Shomali

The two-dimensional M${}_2$Z${}_4$ materials are proposed as suitable replacements for silicon channels in field-effect transistors (FETs). In the present work, the ThSi${}_2$N${}_4$ monol…