3 papers
cond-mat.mtrl-sci2026
Thermal Processing Limits in Oxide-Channel Ferroelectric Field Effect Transistors
Lance Fernandes, Yu-Hsin Kuo, Chengyang Zhang +15
In this work, we report a systematic study of the impact of high-temperature post-capping thermal annealing on the memory characteristics of Oxide-semiconductor channel ferroelectr…
cs.LG2026
Physics-informed AI Accelerated Retention Analysis of Ferroelectric Vertical NAND: From Day-Scale TCAD to Second-Scale Surrogate Model
Gyujun Jeong, Sungwon Cho, Minji Shon +13
Ferroelectric field-effect transistors (FeFET)-based vertical NAND (Fe-VNAND) has emerged as a promising candidate to overcome z-scaling limitations with lower programming voltages…
cond-mat.mtrl-sci2026
ALD Oxidant as A Tuning Knob for Memory Window Expansion in Ferroelectric FETs for Vertical NAND Applications
Ranie Jeyakumar, Prasanna Venkatesan, Lance Fernandes +12
Dielectric inserts are widely used to expand the memory window (MW) in ferroelectric FETs (FeFETs) for vertical NAND applications, with prior efforts focused primarily on material…