3 citations · 3 across the 2 of their papers we have counts for
5 papers · 1 filter
Thermal Processing Limits in Oxide-Channel Ferroelectric Field Effect Transistors
Lance Fernandes, Yu-Hsin Kuo, Chengyang Zhang +15
In this work, we report a systematic study of the impact of high-temperature post-capping thermal annealing on the memory characteristics of Oxide-semiconductor channel ferroelectr…
Conditions for domain-free negative capacitance
Prasanna Venkatesan Ravindran, Priyankka Gundlapudi Ravikumar, Asif Islam Khan
While negative capacitance has been demonstrated in ferroelectric-dielectric heterostructures in the form of capacitance enhancement, all experimental evidence, to date, suggests t…
Engineering Wake-Up-Free Ferroelectric Capacitors with Enhanced High-Temperature Reliability
Nashrah Afroze, Salma Soliman, Yu-Hsin Kuo +5
We systematically explore the design space of ferroelectric hafnium-zirconium oxide (H0.5Z0.5O or HZO) heterostructures for reliable high temperature operation. HZO films are depos…
ALD Oxidant as A Tuning Knob for Memory Window Expansion in Ferroelectric FETs for Vertical NAND Applications
Ranie Jeyakumar, Prasanna Venkatesan, Lance Fernandes +12
Dielectric inserts are widely used to expand the memory window (MW) in ferroelectric FETs (FeFETs) for vertical NAND applications, with prior efforts focused primarily on material…
The First Switch Effect in Ferroelectric Field-Effect Transistors
Priyankka Ravikumar, Prasanna Venkatesan, Chinsung Park +7
In this work, a ferroelectric field-effect transistor (FEFET) is systematically characterized and compared with an equivalent standard MOSFET with an equivalent oxide thickness. We…