activity
20232026
most citedDonor-Acceptor Pairs in Wide-Bandgap Semiconductors for Quantum Technology Applications

19 citations · 22 across the 4 of their papers we have counts for

collaborators

5 papers

quant-ph2026

Delta-Doped GeV in diamond with isotope resolvable optical spectra

Ian N. Hammock, Kinfung Ngan, Antoni W. Wellisz +10

Group IV color centers in diamond -- silicon, germanium, tin, and lead-vacancy centers -- are a promising platform for quantum networking. Typical Group-IV creation utilizes ion im…

cond-mat.mes-hall2025

Extending exciton and trion lifetimes in MoSe with a nanoscale plasmonic cavity

Grace H. Chen, Anchita Addhya, Ian N. Hammock +2

Excitons in transition metal dichalcogenides (TMDs) have extremely short, picosecond-scale lifetimes which hinders exciton thermalization, limits the emergence of collective cohere…

physics.comp-ph2025

Donor-Acceptor Pairs near Silicon Carbide surfaces

Anil Bilgin, Ian N. Hammock, Alexander A. High +1

Donor-acceptor pairs (DAPs) in wide-bandgap semiconductors are promising platforms for the realization of quantum technologies, due to their optically controllable, long-range dipo…

physics.app-ph2023★ 3 cited

Direct-bonded diamond membranes for heterogeneous quantum and electronic technologies

Xinghan Guo, Mouzhe Xie, Anchita Addhya +16

Diamond has superlative material properties for a broad range of quantum and electronic technologies. However, heteroepitaxial growth of single crystal diamond remains limited, imp…

quant-ph2023★ 19 cited

Donor-Acceptor Pairs in Wide-Bandgap Semiconductors for Quantum Technology Applications

Anil Bilgin, Ian Hammock, Jeremy Estes +4

We propose a quantum science platform utilizing the dipole-dipole coupling between donor-acceptor pairs (DAPs) in wide bandgap semiconductors to realize optically controllable, lon…