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cond-mat.mtrl-sci2025
Spin-chirality-dependent modulation of topological gap, Chern number, and valley-polarization in monolayer kagome lattice Cr3Se4
Wenzhe Zhou, Guibo Zheng, Yating Li +2
Kagome materials exhibit unique electronic properties, such as the quantum anomalous Hall effect. The control of Chern numbers is critical for quantum device manipulation, but exis…
cond-mat.mtrl-sci2024
Orbital doublet driven even-spin Chern insulators
Lu Liu, Yuntian Liu, Jiayu Li +2
Quantum spin Hall insulators hosting edge spin currents hold great potential for low-power spintronic devices. In this paper, we present a universal approach to achieve a high and…
cond-mat.mtrl-sci2024
Quantum spin Hall effect protected by spin U(1) quasisymmetry
Lu Liu, Yuntian Liu, Jiayu Li +2
Quantum spin Hall (QSH) effect, where electrons with opposite spin channels are deflected to opposite sides of a two-dimensional system with a quantized conductance, was believed t…