3 papers
cond-mat.mtrl-sci2026
The high K anomaly in ScAlN explained
Ilan Shalish
The integration of scandium aluminum nitride (ScAlN) into functional heterostructures has pushed semiconductor device physics into an extreme piezoelectric regime. Accurately deter…
cond-mat.mtrl-sci2024
Is the Mg-related GaN blue luminescence deep-level an MgO surface state?
Or Haim Chaulker, Yury Turkulets, Ilan Shalish
Mg is currently the only p-type dopant in technological use in GaN. Its incorporation into the GaN lattice is difficult. It requires a thermal treatment that only partially activat…
cond-mat.mtrl-sci2024
NO2 adsorption on GaN surface and its interaction with the yellow-luminescence-associated surface state
Yury Turkulets, Nitzan Shauloff, Or Haim Chaulker +2
Trapping of charge at surface states is a longstanding problem in GaN that hinders a full realization of its potential as a semiconductor for microelectronics. At least part of thi…