74 citations · 123 across the 9 of their papers we have counts for
11 papers
Framework-Conditional Open Materials Generation
Maya M. Martirossyan, Hillary Pan, Philipp Höllmer +1
Theoretical predictions of novel materials rely on a variety of techniques, from data-mining-based ion substitution methods to fully de novo generative models. Each approach impose…
Resolving and resetting the charge environment of single T-centers in silicon p-i-n waveguides
Chaoshen Zhang, Hanbin Song, Lukasz Komza +6
The silicon T-center is a telecom-band spin-photon interface in a manufacturable photonics platform. In nanophotonic devices, however, its optical linewidth is broadened by a fluct…
Laser-induced creation of coherent V2 centers in bulk-grown silicon carbide
L. J. Feije, G. M. Timmer, Y. Hu +9
Solid-state spin defects are promising qubits for quantum network nodes. A key challenge towards larger networks is creating defects with high yield into nanophotonic devices, whil…
A Suspended 4H-Silicon Carbide Membrane Platform for Defect Integration into Quantum Devices
Amberly H. Xie, Aaron M. Day, Jonathan R. Dietz +6
4H-silicon carbide is a promising platform for solid-state quantum technology due to its commercial availability as a wide bandgap semiconductor and ability to host numerous spin-a…
Ultracoherent self-assembled diamond nanomechanics reveals superfluid dynamics
Guanhao Huang, Chang Jin, Sophie Weiyi Ding +9
From gravitational-wave detection, protein force microscopy, to exploration of quantum-classical boundaries, many anticipated discoveries in fundamental science require improving m…
Probing negative differential resistance in silicon with a P-I-N diode-integrated T center ensemble
Aaron M. Day, Chaoshen Zhang, Chang Jin +6
Solid-state defect quantum systems are exquisite probes of their local charge environment. Nonlinear dynamical electric fields in solids are challenging to characterize directly, c…
Selective Undercut of Undoped Optical Membranes for Spin-Active Color Centers in 4H-SiC
Jonathan R. Dietz, Aaron M. Day, Amberly Xie +1
Silicon carbide (SiC) is a semiconductor used in quantum information processing, microelectromechanical systems, photonics, power electronics, and harsh environment sensors. Howeve…
Electrical Manipulation of Telecom Color Centers in Silicon
Aaron M. Day, Madison Sutula, Jonathan R. Dietz +4
Silicon color centers have recently emerged as promising candidates for commercial quantum technology, yet their interaction with electric fields has yet to be investigated. In thi…
Deterministic Creation of Strained Color Centers in Nanostructures via High-Stress Thin Films
Daniel R. Assumpcao, Chang Jin, Madison Sutula +11
Color centers have emerged as a leading qubit candidate for realizing hybrid spin-photon quantum information technology. One major limitation of the platform, however, is that the…
Bottom-up Engineering of Diamond Nanostructures
Igor Aharonovich, Jonathan C. Lee, Andrew P. Magyar +2
Engineering nanostructures from the bottom up enables the creation of carefully engineered complex structures that are not accessible via top down fabrication techniques, in partic…
Coupling of silicon-vacancy centers to a single crystal diamond cavity
Jonathan C. Lee, Igor Aharonovich, Andrew P. Magyar +2
Optical coupling of an ensemble of silicon-vacancy (SiV) centers to single-crystal diamond microdisk cavities is demonstrated. The cavities are fabricated from a single-crystal dia…