Rui-Qi Wang

activity

20232025

most citedControl of magnetic transition, metal-semiconductor transition, and magnetic anisotropy in noncentrosymmetric monolayer Cr

_{2}

_{2}

_{3}

_{3}

3 citations · 8 across the 3 of their papers we have counts for

collaborators

3 papers

cond-mat.mtrl-sci2025★ 3 cited

Control of magnetic transition, metal-semiconductor transition, and magnetic anisotropy in noncentrosymmetric monolayer Cr $_{2}$ Ge $_{2}$ Se $_{3}$ Te $_{3}$

Rui-Qi Wang, Tengfei Cao, Tian-Min Lei +2

Recent advances in two-dimensional materials have greatly expanded the family of ferromagnetic materials. The well-known 2D ferromagnets, such as CrI $_{3}$ , Cr $_{2}$ Ge $_{2}$ Te $_{6}$ , and F…

cond-mat.mtrl-sci2024★ 2 cited

Manipulation of magnetic anisotropy of 2D magnetized graphene by ferroelectric In $_{2}$ Se $_{3}$

Rui-Qi Wang, Tian-Min Lei, Yue-Wen Fang

The capacity to externally manipulate magnetic properties is highly desired from both fundamental and technological perspectives, particularly in the development of magnetoelectron…

cond-mat.mtrl-sci2023★ 3 cited

First-principles design of ferromagnetic monolayer MnO $_{2}$ at the complex interface

Rui-Qi Wang, Tianmin Lei, Yue-Wen Fang

Rapidly increasing interest in low-dimensional materials is driven by the emerging requirement to develop nanoscale solid-state devices with novel functional properties that are no…

Control of magnetic transition, metal-semiconductor transition, and magnetic anisotropy in noncentrosymmetric monolayer Cr2​Ge2​Se3​Te3​

Manipulation of magnetic anisotropy of 2D magnetized graphene by ferroelectric In2​Se3​

First-principles design of ferromagnetic monolayer MnO2​ at the complex interface

Control of magnetic transition, metal-semiconductor transition, and magnetic anisotropy in noncentrosymmetric monolayer Cr $_{2}$ Ge $_{2}$ Se $_{3}$ Te $_{3}$

Manipulation of magnetic anisotropy of 2D magnetized graphene by ferroelectric In $_{2}$ Se $_{3}$

First-principles design of ferromagnetic monolayer MnO $_{2}$ at the complex interface