3 citations · 5 across the 8 of their papers we have counts for
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Sensitivity of Multislice Electron Ptychography to Point Defects: A Case Study in SiC
Aaditya Bhat, Colin Gilgenbach, Junghwa Kim +3
Here, we evaluate multislice electron ptychography as a tool to carry out depth-resolved atomic resolution characterization of point defects, using silicon carbide as a case study.…
Quantifying Implantation Induced Damage and Point Defects with Multislice Electron Ptychography
Junghwa Kim, Colin Gilgenbach, Aaditya Bhat +1
Here, we use multislice electron ptychography to quantify damage introduced by ion implantation of Er into 4H-SiC. Comparing reconstructed volumes from experiment (each 2,000 nm$^{…
Bridging experiment and theory of relaxor ferroelectrics at the atomic scale with multislice electron ptychography
Menglin Zhu, Michael Xu, Yubo Qi +7
Introducing structural and/or chemical heterogeneity into otherwise ordered crystals can dramatically alter material properties. Lead-based relaxor ferroelectrics are a prototypica…