activity
20162025
most citedScreening limited switching performance of multilayer 2D semiconductor FETs: the case for SnS

73 citations · 82 across the 6 of their papers we have counts for

collaborators

6 papers

physics.optics2025

Femtojoule-per-operation photonic computer for the subset sum problem

Tian-Yu Zhang, Xiao-Yun Xu, Wen-Hao Zhou +7

Energy-efficient computing is becoming increasingly important in the information era. However, electronic computers with von Neumann architecture can hardly meet the challenge due…

physics.optics2025

A fully-programmable integrated photonic processor for both domain-specific and general-purpose computing

Feng-Kai Han, Xiao-Yun Xu, Tian-Yu Zhang +10

A variety of complicated computational scenarios have made unprecedented demands on the computing power and energy efficiency of electronic computing systems, including solving int…

physics.optics2025

Error-Corrected Eternal Lifetime Storage

Jie Ma, Chu-Han Wang, Xiao-Yun Xu +5

In the information explosion era, the demand for high-density stable storage technologies is soaring. Multi-dimensional optical storage with femtosecond laser writing offers a pote…

physics.optics2023★ 2 cited

A Reconfigurable Photonic Processor for NP-complete Problems

Xiao-Yun Xu, Tian-Yu Zhang, Zi-Wei Wang +2

NP-complete problems are widely and deeply involved in various real-life scenarios while still intractable to solve efficiently on conventional computers. It is of great practical…

cond-mat.mtrl-sci2022★ 7 cited

Two-dimensional anisotropic Dirac materials PtN4C2 and Pt2N8C6 with quantum spin and valley Hall effects

Jingping Dong, Chuhan Wang, Xinlei Zhao +4

We propose two novel two-dimensional topological Dirac materials, planar PtN4C2 and Pt2N8C6, which exhibit graphene-like electronic structures with linearly dispersive Dirac-cone s…

cond-mat.mes-hall2016★ 73 cited

Screening limited switching performance of multilayer 2D semiconductor FETs: the case for SnS

Sukrit Sucharitakul, Rajesh Kumar Ulaganathan, Raman Sankar +6

Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their…