4 citations · 4 across the 5 of their papers we have counts for
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Statistically Robust Characterization of Polaron and Bipolaron Intrinsic Traps in Amorphous Silica Reveals the Role of Network Flexibility in Electron Localisation
Robin Delhomme, Jonathon Cottom, Emilia Olsson
Intrinsic electron localization in amorphous silica (a-SiO2) contributes to charge trapping and defect generation in silica-based electronic materials - a phenomenon that degrades…
State aligned graph wavelet fingerprints of electron trapping in amorphous SiN
Jonathon Cottom, Emilia Olsson
Classifying charge traps in amorphous materials requires the electronic state and the network response to be resolved together. We develop state-aligned graph-wavelet fingerprints…
Vitriflow: calibrated amorphous structure ensembles from melt-quench simulation
Jonathon Cottom, Robin Delhomme, Emilia Olsson
Many structure-property relations in amorphous materials are encoded not only in the mean structure, but in the prevalence, correlations and spatial organisation of minority enviro…
Topology-Directed Silicide Formation: An Explanation for the Growth of C49-TiSi on the Si(100) Surface
Lukas Hückmann, Jonathon Cottom, Jörg Meyer +1
Designing metal-semiconductor junctions is essential for optimizing the performance of modern nanoelectronic devices. A widely used material is TiSi, which combines low electro…
Elucidating the impact of point defects on the structural, electronic, and mechanical behaviour of chromium nitride
Barsha Bhattacharjee, Emilia Olsson
Defect engineering offers an important route to property tuning of nanostructured coatings for advanced applications. Transition metal nitrides, such as CrN, are widely used for th…