Topology-Directed Silicide Formation: An Explanation for the Growth of C49-TiSi${}_2$ on the Si(100) Surface

Lukas Hückmann, Lukas Hückmann, Jonathon Cottom +3

Designing metal-semiconductor junctions is essential for optimizing the performance of modern nanoelectronic devices. A widely used material is TiSi${}_2$, which combines low electro…