Andrew M. Armstrong

most citedTunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor

1 citations · 1 across the 2 of their papers we have counts for

collaborators

2 papers

physics.app-ph2025

Optical characterization of deep level defects in n-type Al $_{x}$ In $_{y}$ Ga $_{1 - x - y}$ P for development of solid-state photomultiplier analogs

Andrew M. Armstrong, Evan M. Anderson, Lisa N. Caravello +6

Characterizing intrinsic defects is an important step in evaluating materials for new optoelectronic device applications. For photomultipliers, suppressing dark currents is critica…

physics.app-ph2024★ 1 cited

Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor

Sheikh Ifatur Rahman, Mohammad Awwad, Chandan Joishi +4

GaN/InGaN microLEDs are a very promising technology for next generation displays. Switching control transistors and their integration are key components in achieving high-performan…

Optical characterization of deep level defects in n-type Alx​Iny​Ga1−x−y​P for development of solid-state photomultiplier analogs

Tunnel Junction-Enabled Monolithically Integrated GaN Micro-Light Emitting Transistor

Optical characterization of deep level defects in n-type Al $_{x}$ In $_{y}$ Ga $_{1 - x - y}$ P for development of solid-state photomultiplier analogs