collaborators

6 papers

cond-mat.mtrl-sci2026

Bi-S network origin of cation-disorder stability and dispersive band edges in AgBiS2

Han-Pu Liang, Songyuan Geng, Heng Kang +9

Cation-disordered AgBiS2 is a promising lead-free optoelectronic material, but both its ordered structure and the microscopic origin of its favorable electronic properties remain d…

cond-mat.mtrl-sci2026

Identifying and designing altermagnetic crystals in real space

Ying Chen, Qiushi Huang, Yu Wu +2

Altermagnetism is a compensated magnetic phase characterized by zero net magnetization and exchange-driven spin splitting. However, identifying altermagnets among collinear antifer…

cond-mat.mtrl-sci2026

Charge Symmetry Beyond Space-Group Equivalence

Qiu-Shi Huang, Xin-Gao Gong, Su-Huai Wei

Crystallographic space-group symmetry , determined by atomic species and their spatial arrangement, is one of the most important descriptors in solid-state physics, un…

cond-mat.mtrl-sci2025

Revisiting the theory of crystal polarization: The downside of employing the periodic boundary conditions

Qiu-Shi Huang, Su-Huai Wei

Periodic boundary condition (PBC) is a standard approximation for calculating crystalline materials properties. However, a PBC crystal is not the same as the real macroscopic cryst…

cond-mat.mtrl-sci2025

Effect of Concentration Fluctuations on Material Properties of Disordered Alloys

Han-Pu Liang, Chuan-Nan Li, Xin-Ru Tang +4

Alloying compound AX with another compound BX is widely used to tune material properties. For disordered alloys, due to the lack of periodicity, it has been challenging to calculat…

cond-mat.mtrl-sci2025

Mechanism of Defect Generation in Ionizing-irradiated -SiO: The Nonradiative Carrier Capture-Structural Relaxation Model

Yu Song, Chen Qiu, Su-Huai Wei

The total ionizing dose (TID) effect of semiconductor devices stems from radiation-induced defects in the -SiO dielectrics, but the conventional ``hole transport-tra…