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cond-mat.mtrl-sci2026

Crystallography of periodic nanotextures in a strained Mott insulator

Benjamin Z. Gregory, Yorick A. Birkhölzer, Noah Schnitzer +9

Here we investigate stripes of alternating structural phases spontaneously forming in epitaxially strained thin films below the metal-insulator transition. Using large-…

cond-mat.mtrl-sci2026

Synthesis of epitaxial TaO thin films on AlO by suboxide molecular-beam epitaxy and thermal laser epitaxy

Yorick A. Birkhölzer, Anna S. Park, Noah Schnitzer +28

Tantalum dioxide (TaO2) is a metastable tantalum compound. Here, we report the epitaxial stabilization of TaO2 on Al2O3 (1-102) (r-plane sapphire) substrates using suboxide molecul…

cond-mat.mtrl-sci2026

Above Room Temperature Ferroelectricity in Epitaxially Strained KTaO3

Tobias Schwaigert, Salva Salmani-Rezaie, Sankalpa Hazra +9

Epitaxial strain is a powerful means to engineer emergent phenomena in thin films and heterostructures. Here, we demonstrate that KTaO3, a cubic perovskite in bulk form, can be epi…

cond-mat.mtrl-sci2025

Preparation and evaluation of alexandrite, forsterite, and topaz substrates for the epitaxial growth of rutile oxides

Monique Kubovsky, Yorick A. Birkhölzer, Luka B. Mitrovic +3

Metal-insulator transitions and superconductivity in rutile-structured oxides hold promise for advanced electronic applications, yet their thin film synthesis is severely hindered…

cond-mat.mtrl-sci2025

Turn-on of Current-Induced Spin Torque upon Noncollinear Antiferromagnetic Ordering in Delafossite PdCrO2

Xiaoxi Huang, Qi Song, Gautam Gurung +10

We report measurements of the current-induced spin torque produced by the delafossite antiferromagnet PdCrO2 and acting on an adjacent ferromagnetic permalloy layer. The spin torqu…

cond-mat.mtrl-sci2025

Improper Ferroelectricity at the Monolayer Limit

Yilin Evan Li, Harikrishnan KP, Haidong Lu +20

Ultrathin ferroelectric films with out-of-plane polarization and high Curie temperatures are key to miniaturizing electronic devices. Most ferroelectrics employed in devices are pr…