activity
20222026
most cited20 ps Non-Destructive Read and 1 ns Write Operations at <5 V in Ferroelectric HfO2/ZrO2 Non-Volatile Memories

1 citations · 1 across the 5 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2026

Elemental Germanium Phase-Change Memory

Till Zellweger, Marko Mladenović, Kevin Portner +7

Phase-change memory (PCM) is a mature technology for fast, scalable, non-volatile data storage, with applications spanning embedded memory, as well as in-memory and neuromorphic co…

physics.app-ph2026★ 1 cited

20 ps Non-Destructive Read and 1 ns Write Operations at <5 V in Ferroelectric HfO2/ZrO2 Non-Volatile Memories

Alexandre Baigol, Ruben Hamming-Green, Paul Uriarte Vicandi +8

Achieving low-voltage, nanosecond multi-level programming and non-destructive read-out of ferroelectric non-volatile memories (NVM) is critical for analog in-memory computing archi…

cs.ET2025

Conductance-dependent Photoresponse in a Dynamic SrTiO3 Memristor for Biorealistic Computing

Christoph Weilenmann, Hanglin He, Marko Mladenović +6

Modern computers perform pre-defined operations using static memory components, whereas biological systems learn through inherently dynamic, time-dependent processes in synapses an…

cs.NE2024

Single Neuromorphic Memristor closely Emulates Multiple Synaptic Mechanisms for Energy Efficient Neural Networks

Christoph Weilenmann, Alexandros Ziogas, Till Zellweger +6

Biological neural networks do not only include long-term memory and weight multiplication capabilities, as commonly assumed in artificial neural networks, but also more complex fun…

cond-mat.mes-hall2024

Self-induced light emission in solid-state memristors replicates neuronal biophotons

K. Malchow, T. Zellweger, B. Cheng +3

Key pre-synaptic and post-synaptic biological functions have been successfully implemented in various hardware systems. A noticeable example are neuronal networks constructed from…

cond-mat.mes-hall2022

Overbias Light Emission From Memristive Nanojunctions

S. Hamdad, K. Malchow, E. Dujardin +4

A nanoscale dielectric gap clamped between two metal electrodes may undergo a large resistance change from insulating to highly conducting upon applying an electrical stress. This…