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20242026
most citedCharacterization of 4H-SiC Low Gain Avalanche Detectors (LGADs)

5 citations · 5 across the 3 of their papers we have counts for

collaborators

5 papers

physics.ins-det2026

Ultra-Fast 4H-SiC AC-LGAD for 4D Tracking Applications

Tao Yang, Chengxi Yang, Ben J. Sekely +12

4H-SiC low gain avalanche detectors (LGADs) combine internal gain with the high carrier saturation drift velocity, thermal stability, and low leakage current of SiC. AC-coupled rea…

physics.ins-det2026

Impact of Gain Layer Doping Concentration on the Performance of 4H-SiC LGADs

Tao Yang, Ben J. Sekely, Yashas Satapathy +12

Gain layer doping concentration determines the electric field profile in a low gain avalanche detector (LGAD) and is therefore the primary design parameter. This work reports its i…

physics.ins-det2025

Time Resolution Characterization of 4H-SiC LGADs with a Sr Source

Tao Yang, Yashas Satapathy, Ben J. Sekely +9

This work presents timing measurements of 4H-SiC Low Gain Avalanche Detectors (4H-SiC LGADs) using beta particles from a Sr source. The 4H-SiC LGADs exhibit fast signal re…

physics.ins-det2025

Impact of Proton Irradiation on 4H-SiC Low Gain Avalanche Detectors (LGADs)

Yashas Satapathy, Ben J. Sekely, Abraham Tishelman-Charny +9

Silicon carbide (SiC) particle detectors have the potential to provide time resolutions and robust performance in extreme environments which exceed that of silicon detectors. In th…

physics.ins-det2024★ 5 cited

Characterization of 4H-SiC Low Gain Avalanche Detectors (LGADs)

Tao Yang, Ben Sekely, Yashas Satapathy +7

4H-SiC low gain avalanche detectors (LGADs) have been fabricated and characterized. The devices employ a circular mesa design with low-resistivity contacts and an SiO passivati…