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cond-mat.mtrl-sci2026
Reliable and High Performance IGZO and In2O3 Transistors via Channel Capping
C. W. Cheng, J. Smith, K. Mashooq +13
A device and process strategy for achieving reliable indium gallium zinc oxide and indium oxide transistors compatible with a 400oC BEOL thermal budget and without performance degr…
cond-mat.mtrl-sci2025
Innovative Oxide Transistor Satisfying Performance and Reliability Simultaneously by Understanding of Physics and Materials Properties
C. W. Cheng, J. Smith, P. Solomon +12
Guided by a comprehensive analysis of accumulation mode transistor physics and oxide semiconductor materials properties, we demonstrate an innovative oxide semiconductor transistor…