2 papers
cond-mat.mtrl-sci2025
Controlling GaN nucleation via O-plasma-perforated graphene masks on c-plane sapphire
Su Young An, Chinkyo Kim
Atomically thin, perforated graphene on -plane sapphire functions as a nanoscale mask that enables GaN growth through thru-holes. We tune the perforated-area fraction by c…
cond-mat.mtrl-sci2025
Scalable thru-hole epitaxy of GaN through self-adjusting -BN masks via solution-processed 2D stacks
Jongwoo Ha, Minah Choi, Jieun Yang +1
Selective epitaxy on 2D-material masks is a promising pathway for achieving localized, defect-suppressed GaN growth, but conventional 2D transfer processes limit scalability and in…