4 papers
Landau-like formalism for the thermal-runaway and filamentation instabilities in switching Mott devices
Aniket Bajaj, Anudeep Tullibilli, Arup Basak +2
Correlated oxides can switch to a low-resistance state when exposed to a voltage, making these insulator-to-metal transition materials promising candidates for memristor technology…
Interplay of spin-lattice and electronic coupling far above Neel ordering in 2D antiferromagnetic CrPS4 and its interface manifestation
Divya Jangra, Binoy Krishna De, Mukesh Kumar Dasoundhi +13
A short-range spin correlation driven, strongly intercoupled spin-phonon-electronic state far above TN (~38K) is identified in the low dimensional van der Waals antiferromagnet CrP…
Field-induced reversible phase transition and negative differential resistance in In2Se3 ferroelectric semiconducting FETs
Jishnu Ghosh, Shubham Parate, Arup Basak +6
Indium selenide (In2Se3), a ferroelectric semiconductor, offers a unique platform for multifunctional nanoelectronics owing to the interplay between polarization dynamics, interlay…
Anion Doping Driven Non-Ferroelectric-to-Ferroelectric Phase Transition in Epitaxial Y:HfO2
Soumyajyoti Mondal, Binoy Krishna De, Asraful Haque +10
Oxygen vacancies are often essential for stabilizing the orthorhombic ferroelectric phase in HfO2, with cationic doping widely employed to introduce such defects. In contrast, syst…