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cond-mat.mtrl-sci2025
Over One Order of Magnitude Enhancement in Hole Mobility of 2D III-V Semiconductors through Valence Band Edge Shift
Jianshi Sun, Shouhang Li, Cheng Shao +6
Two-dimensional (2D) semiconductors show great potential to sustain Moore's law in the era of ultra-scaled electronics. However, their scalable applications are severely constraine…
cond-mat.mtrl-sci2024
Unlocking high hole mobility in diamond over a wide temperature range via efficient shear strain
Jianshi Sun, Shouhang Li, Cheng Shao +9
As a wide bandgap semiconductor, diamond holds both excellent electrical and thermal properties, making it highly promising in the electrical industry. However, its hole mobility i…