13 citations · 16 across the 5 of their papers we have counts for
4 papers · 1 filter
Compositional gradient engineering for enhanced ferroelectricity in ultrathin AlScN
Zekun Hu, Haiwen Zhang, Rajeev Kumar Rai +12
Ferroelectric AlScN is promising for CMOS-compatible non-volatile memory, but thickness scaling is limited by leakage, premature breakdown, and defect-mediated failure. Here we sho…
Low-Field Ferroelectricity in 10 nm AlBScN Thin Films
Xiaolei Tong, Pedram Yousefian, Ziyi Wang +5
Ferroelectric aluminum scandium nitride (Al1-xScxN, AlScN) offers CMOS-compatible integration but suffers from high coercive fields and leakage currents that hinder thickness scali…
Leakage Suppression Across Temperature in Al1-xScxN Thin Film Ferroelectric Capacitors through Boron Incorporation
Pedram Yousefian, Xiaolei Tong, Jonathan Tan +3
This paper presents high-temperature ferroelectric characterization of 40~nm AlBScN (AlBScN) thin film capacitors grown by co-sputtering AlB and…
Electrical Degradation in Dielectric and Piezoelectric Oxides: Review of Defect Chemistry and Associated Characterization Techniques
Pedram Yousefian, Betul Akkopru-Akgun, Clive A. Randall +1
The properties of dielectric and piezoelectric oxides are determined by their processing history, crystal structure, chemical composition, microstructure, dopants (or defect) distr…