2 papers
physics.app-ph2026
Are gate-all-around 2D CFETs the optimal architecture for the A2 node and beyond?
Fengben Xi, Gautam Gaddemane, Anshul Gupta +15
As logic scaling enters the angstrom era, vertically stacked complementary field-effect transistors (CFETs) based on atomically thin two-dimensional (2D) semiconductors offer a pot…
physics.app-ph2025
How to Identify Suitable Gate Dielectrics for Transistors based on Two-Dimensional Semiconductors
Theresia Knobloch, Quentin Smets, Anton E. O. Persson +23
The recent progress in nanosheet transistors has established two-dimensional (2D) semiconductors as viable candidates for future ultra-scaled electronic devices. Next to reducing c…